IRFE120

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction to Case

—

—

9.1

RthJ-PCB

Junction to PC Board

—

—

26"""

Soldered to a copper clad PC board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

4.5

ISM

Pulse Source Current (Body Diode) ➀

——

1 8

VSD

Diode Forward Voltage

—

—

1.8

V

trr

Reverse Recovery Time

—

—

240

nS

Tj = 25°C, IF = 4.5A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

2.0

µc

VDD ≤ 50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.10

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.30

VGS = 10V, ID =3.0A➃

Resistance

—

—

0.345

VGS =10V, ID = 4.5A ➃

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID =250µA

gfs

Forward Transconductance

1.5

—

—

S ( )

VDS > 15V, IDS =3.0A➃

IDSS

Zero Gate Voltage Drain Current

—

—

2 5

VDS=80V, VGS=0V

—

—

250

VDS =80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

1 7

VGS =10V, ID= 4.5A

Qgs

Gate-to-Source Charge

—

—

4.0

nC

VDS =50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

7.7

Turn-On Delay Time

—

—

4 0

VDD =50V, ID =4.5A,

t r

Rise Time

—

—

7 0

RG =7.5Ω

Turn-Off Delay Time

—

—

4 0

tf

Fall Time

—

—

7 0

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

350

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

150

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

2 4

—

nA

nH

ns

µA

Ω

Measured from the center of

drain pad to center of source

pad