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TLP666G Datasheet(数据表) 2 Page - Toshiba Semiconductor

部件型号  TLP666G
说明  Photocoupler GaAs Ired & Photo-Triac
下载  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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 2 page
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TLP666G
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta ≥ 53°C)
∆IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off
-state output terminal voltage
VDRM
400
V
Ta=25°C
100
On
-state RMS current
Ta=70°C
IT(RMS)
50
mA
On
-state current derating (Ta ≥ 25°C)
∆IT / °C
-1.1
mA / °C
Peak on
-state current (100µs pulse, 120pps)
ITP
2
A
Peak nonrepetitive surge current (PW=10ms, DC=10%)
ITSM
1.2
A
Junction temperature
Tj
115
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~100
°C
Lead solder temperature (10s)
Tsold
260
°C
Isolation voltage (AC, 1min., R.H.≤ 60%)
(Note 2)
BVS
5000
Vrms
(Note 2) Pins 1,2 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
120
Vac
Forward current
IF
15
20
25
mA
Peak on
-state current
ITP
1
A
Operating temperature
Topr
-25
85
°C




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