Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF

Drain–Source Breakdown Voltage

100

–

–

V

Drain–to–Source Leakage Current

–

–

1

µA

–

–

10

µA

Gate–Source Leakage Forward

–

–

100

nA

Gate–Source Leakage Reverse

–

–

–100

nA

ON (Note 5)

Gate Threshold Voltage

1.0

1.6

2.5

V

Static Drain–Source ON Resistance

–

0.09

0.12

Ω

On–State Drain Current

20

–

–

A

Dynamic

Forward Transconductance

Note 5

10

16

–

mhos

Input Capacitance

–

1200

1500

pF

Output Capacitance

–

250

350

pF

Reverse Transfer Capacitance

–

60

90

pF

Switching

Total Gate Charge

–

22

30

nC

Gate–Source Charge

–

6

–

nC

Gate–Drain (“Miller”) Charge

–

12

–

nC

Turn–On Delay Time

–

50

70

ns

Rise Time

–

140

200

ns

Turn–Off Delay Time

–

80

110

ns

Fall Time

–

80

110

ns

Source–Drain Diode Ratings and Characteristics

Continuous Source Current

(Body Diode)

–

–

20

A

Pulse Source Current

(Body Diode) Note 1

–

–

80

A

Diode Forward Voltage

–

–

1.5

V

Reverse Recovery Time

µ

–

130

–

ns

Reverse Recovery Charge

di/dt = 100A/

µs

–

0.4

–

µC

Reverse Recovery Current

–

6

–

A

Note 1. Pulse width limited by safe operating area.

Note 5. Pulse Test: Pulse Width = 300

µs, Duty Cycle = 1.5%.