Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain–Source Breakdown Voltage

60

–

–

V

Breakdown Voltage Temperature

Coefficient

Reference to +25

–

0.07

–

V/

°C

Static Drain–Source ON Resistance

–

–

0.028

Ω

–

–

0.039

Ω

Gate Threshold Voltage

1.0

–

2.0

V

Forward Transconductance

23

–

–

mhos

Drain–to–Source Leakage Current

–

–

25

µA

–

–

250

µA

Gate–Source Leakage Forward

–

–

100

nA

Gate–Source Leakage Reverse

–

–

–100

nA

Total Gate Charge

–

–

66

nC

Gate–Source Charge

–

–

12

nC

Gate–Drain (“Miller”) Charge

–

–

43

nC

Turn–On Delay Time

Ω

–

17

–

ns

Rise Time

–

230

–

ns

Turn–Off Delay Time

–

42

–

ns

Fall Time

–

110

–

ns

Internal Drain Inductance

Between lead, 6mm (0.25”) from

–

4.5

–

nH

Internal Source Inductance

package and center of die contact

–

7.5

–

nH

Input Capacitance

–

3300

–

pF

Output Capacitance

–

1200

–

pF

Reverse Transfer Capacitance

–

200

–

pF

Source–Drain Diode Ratings and Characteristics

Continuous Source Current

(Body Diode)

–

–

50

A

Pulse Source Current

(Body Diode) Note 1

–

–

200

A

Diode Forward Voltage

–

–

2.5

V

Reverse Recovery Time

–

130

180

ns

Reverse Recovery Charge

Note 4

–

0.84

1.3

µC

Forward Turn–On Time

Intrinsic turn–on time is neglegible

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 4. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.