KSD1408-Y datasheet(1/2 Pages) MCC | NPN Silicon Power Transistors

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KSD1408-Y 数据表(PDF) 1 Page - Micro Commercial Components

部件名	KSD1408-Y

功能描述	NPN Silicon Power Transistors

Download	2 Pages

Scroll/Zoom	100%

制造商	MCC [Micro Commercial Components]

网页	http://www.mccsemi.com

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KSD1408-Y 数据表(HTML) 1 Page - Micro Commercial Components

KSD1408-Y Datasheet HTML 1Page - Micro Commercial Components

KSD1408-Y Datasheet HTML 2Page - Micro Commercial Components

1 / 2 page

background image

KSD1408-Y

NPN Silicon

Power Transistors

Features

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

Maximum Ratings

omponents

20736 Marilla Street Chatsworth

!"#

$% !"#

Revision:

A

201

7/05/17

www.mccsemi.com

1 of

2

Symbol

Rating

Rating

Unit

VCEO

Collector-Emitter Voltage

80

V

VCBO

Collector-Base Voltage

80

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

4.0

A

PC

Collector power dissipation

2.0

W

TJ

Junction Temperature

-55 to +150

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25

OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=0.1mAdc, IE=0)

80

---

---

Vdc

ICBO

Collector-Base Cutoff Current

(VCB=

80Vdc,IE=0)

---

---

30

uAdc

IEBO

Emitter-Base Cutoff Current

(VEB=5.0Vdc, IC=0)

---

---

1

00

uAdc

hFE

DC Current Gain

(IC=0.5Adc, VCE=5.0Vdc)

120

---

240

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=3.0Adc, IB=0.3Adc)

---

---

1.5

Vdc

fT

Transition Frequency

(VCE=

5Vdc, IC=0.5Adc)

8

---

---

MHz

A

N

M

P

Q H

J

B

D

C

E

F

12

3

PIN 1.

BASE

PIN 2.

COLLECTOR

PIN 3.

EMITTER

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.392

.408

9.96

10.36

Φ

C

.106

2.70

D

.583

.598

14.80

15.20

F

.1

02

.1

18

2.60

3.00

H

.020

.030

0.50

0.75

M

.169

.185

4.30

4.70

N

.110

.126

2.80

3.20

Q

.020

.030

0.50

0.75

TO-220F

B.138

3.50

E

.520

13.20

G

G

.100

2.54

J

.043

.053

1.10

1.35

P

.098

.114

2.50

2.90

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

•

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Halogen free available upon request by adding suffix "-HF"

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=

50mAdc, IB=0)

80

---

---

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=100uAdc, IC=0)

5.0

---

---

Vdc

Micro Commercial Components

M C C

R

RθJA

Thermal Resistance From Junction To Ambient

62.5

o

C/W

(IC=3.0Adc, VCE=5.0Vdc)

15

---

---

---

VBE

Base-Emitter Voltage

(

V

C

E=5.0Vdc, I C=3.0Adc)

---

---

1.5

Vdc

Cob

Collector output capacitance

(VCB=10Vdc, IE=

0,f=1MHz)

90

---

---

MHz

类似零件编号 - KSD1408-Y

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	KSD1408	49Kb / 4P	Power Amplifier Applications
Inchange Semiconductor ...	KSD1408	136Kb / 2P	isc Silicon NPN Power Transistor
Jiangsu Changjiang Elec...	KSD1408	1Mb / 3P	TO-220F Plastic-Encapsulate Transistors

类似说明 - KSD1408-Y

制造商	部件名	数据表	功能描述
Motorola, Inc	MJ8504	416Kb / 6P	NPN SILICON POWER TRANSISTORS
Texas Instruments	TIPL751	224Kb / 7P	[Old version datasheet] NPN SILICON POWER TRANSISTORS
Transys Electronics	TIPL765	805Kb / 6P	NPN SILICON POWER TRANSISTORS
Siemens Semiconductor G...	BU208	100Kb / 4P	NPN SILICON POWER TRANSISTORS
	BUX80	117Kb / 5P	NPN SILICON POWER TRANSISTORS
	BUX84	106Kb / 5P	NPN SILICON POWER TRANSISTORS
Boca Semiconductor Corp...	2N6676	144Kb / 3P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	TIP47	199Kb / 6P	POWER TRANSISTORS NPN SILICON 1995 REV 1
	2N5301	251Kb / 6P	POWER TRANSISTORS NPN SILICON 1995
	2N5655	176Kb / 4P	POWER TRANSISTORS NPN SILICON April, 2002 ??Rev. 7
	2N6338	155Kb / 4P	POWER TRANSISTORS NPN SILICON May, 2001 ??Rev. 10

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