Monolithic E-PHEMT MMIC Amplifier Die

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Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

TSY-172LNB-D+

Parameter

Ratings

Operating Temperature (ground lead)

-40°C to 85°C

Total Power Dissipation

0.2W

Input Power

Amplifier - ON

10 dBm (continuous), +23 dBm (5 min. max)

Amplifier Bypass

15 dBm (continuous), +22 dBm (5 min. max)

6V

DC Voltage Enable

6V

5. Permanent damage may occur if any of these limits are exceeded.

Electrical maximum ratings are not intended for continuous normal operation.

1. Measured on Mini-Circuits Characterization Test Board Die packaged in 2x2 mm, 8-lead MCLP package and soldered on TB-943+. See Characterization Test Circuit (Fig. 1)

2. Current increases to 28-54 mA typ. at P1dB

3. Tested at Pout=+6 dBm/tone

4. ((Current at 85°C - Current at -45°C)/130)

Parameter

Condition

(GHz)

Amplifier - ON

Amplifier - Bypass

Units

Min.

Typ.

Max.

Typ.

Frequency Range

0.03

1.7

0.03 - 1.7

GHz

Noise Figure

0.03

1.3

0.3

dB

0.5

1.2

0.8

1.0

1.4

1.3

1.5

1.8

1.8

1.7

1.9

2.4

Gain/ Insertion loss

0.03

15.3

-0.5

dB

0.5

14.7

-0.8

1.0

13.1

-1.8

1.5

11.0

-3.2

1.7

10.1

-3.7

Input Return Loss

0.03

13

19

dB

0.5

14

14

1.0

10

8

1.5

6

6

1.7

6

5

Output Return Loss

0.03

16

18

dB

0.5

18

13

1.0

14

7

1.5

11

5

1.7

10

6

0.03

15.8

1.2

dBm

0.5

17.1

2.7

1.0

17.5

3.1

1.5

17.8

2.6

1.7

17.4

1.4

0.03

25.6

24.9

dBm

0.5

26.4

28.4

1.0

24.7

30.4

1.5

24.0

23.5

1.7

22.4

19.5

2.5

2.7

3.0

0

V

—

7.7

10.6

0.2

mA

2.5

2.7

3.0

0

V

1.5

—

µA/°C

Device Current Variation vs. Voltage

0.0067

—

mA/mV

Thermal Resistance, junction-to-ground lead

229

—

°C/W

Min.

Typ.

Max.

Units

Amplifier-ON (V

2.5

2.7

2.9

V

Amplifier-Bypass (V

—

—

0.3