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SM6GZ47 数据表(PDF) 1 Page - Toshiba Semiconductor |
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SM6GZ47 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A 2001-07-13 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S ON−State Current : IT (RMS) = 6A l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM6GZ47 SM6GZ47A 400 Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SM6JZ47 SM6JZ47A VDRM 600 V R.M.S On−State Current (Full Sine Waveform Tc = 90°C) IT (RMS) 6 A 60 (50Hz) Peak One Cycle Surge On-State Current (Non−Repetitive) ITSM 66 (60Hz) A I 2 t Limit Value I 2 t 18 A 2 s Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Gate Voltage VFGM 10 V Peak Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Isolation Voltage (AC, t = 1min.) VISOL 1500 V JEDEC ― JEITA ― TOSHIBA 13−10H1A Weight: 1.7g Unit: mm Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 9A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 |
类似零件编号 - SM6GZ47 |
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类似说明 - SM6GZ47 |
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