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TLP666J 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TLP666J
功能描述  TOSHIBA Photocoupler GaAs Ired & Photo-Triac
Download  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TLP666J 数据表(HTML) 3 Page - Toshiba Semiconductor

  TLP666J Datasheet HTML 1Page - Toshiba Semiconductor TLP666J Datasheet HTML 2Page - Toshiba Semiconductor TLP666J Datasheet HTML 3Page - Toshiba Semiconductor TLP666J Datasheet HTML 4Page - Toshiba Semiconductor TLP666J Datasheet HTML 5Page - Toshiba Semiconductor TLP666J Datasheet HTML 6Page - Toshiba Semiconductor  
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TLP666J
2002-09-25
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
―
―
10
µA
Capacitance
CT
V = 0, f = 1MHz
―
30
―
pF
Peak off
-state currentt
IDRM
VDRM = 600V
―
10
1000
nA
Peak on
-state voltage
VTM
ITM = 100mA
―
1.7
3.0
V
Holding current
IH
―
―
0.6
―
mA
Critical rate of rise of
off
-state voltage
dv / dt
Vin = 240V, Ta = 85°C
(Note 3)
200
500
―
V / µs
Critical rate of rise of
commutating voltage
dv / dt(c)
Vin = 60Vrms, IT = 15mA
(Note 3)
―
0.2
―
V / µs
(Note 3) dv / dt test circuit
1
2
3
6
4
VCC
Vin
RL
RL
4kΩ
120Ω
Rin
dv / dt（c）
dv / dt
5V, VCC
0V
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VT = 6V
―
5
10
mA
Inhibited voltage
VIH
IF = rated IFT
―
―
50
V
Leakage in inhibited state
IIH
IF = rated IFT
VT = rated VDRM
―
200
600
µA
Capacitance (input to output)
CS
VS = 0, f = 1MHz
―
0.8
―
pF
Isolation resistance
RS
VS = 500V, R.H.≤ 60%
1×10
12
10
14
―
Ω
AC, 1 minute
5000
―
―
AC, 1 second, in oil
―
10000
―
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
―
10000
―
Vdc


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