数据搜索系统,热门电子元器件搜索 |
|
TLP591B 数据表(PDF) 1 Page - Toshiba Semiconductor |
|
TLP591B 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page TLP591B 2002-09-25 1 TOSHIBA Photocoupler GaAℓAs Ired & Photo −Diode Array TLP591B Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver The TOSHIBA TLP591B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo−diode array in a six lead plastic DIP package. TLP591B is suitable for MOS FET gate driver. TLP591B has an internal shunt resistor to optimize switching speed. · UL recognized: UL1577, file no. E67349 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 25°C) ∆IF /°C -0.5 mA /°C Pulse forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 3 V Junction temperature Tj 125 °C Forward current IFD 50 µA Reverse voltage VRD 10 V Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~85 °C Lead soldering temperature (10 sec.) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 1) BVS 2500 Vrms (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together. Pin Configuration (top view) 1. : Anode 2. : Cathode 3. : NC 4. : Cathode 6. : Anode 1 2 4 6 3 Unit in mm TOSHIBA 11−7A9 |
类似零件编号 - TLP591B |
|
类似说明 - TLP591B |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |