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KA1M0880BF-TU 数据表(PDF) 2 Page - Fairchild Semiconductor |
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KA1M0880BF-TU 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page KA1M0880BF 2 Absolute Maximum Ratings Notes: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 24mH, VDD = 50V, RG = 25 Ω, starting Tj = 25°C 4. L = 13 µH, starting Tj = 25°C Parameter Symbol Value Unit Maximum Drain Voltage (1) VD,Max 800 V Drain-Gate Voltage (RGS=1M Ω)VDGR 800 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 32.0 ADC Single Pulsed Avalanche Energy (3) EAS 810 mJ Avalanche Current (4) IAS 15 A Continuous Drain Current (TC=25 °C) ID 5.8 ADC Continuous Drain Current (TC=100 °C) ID 3.6 ADC Maximum Supply Voltage VCC,MAX 30 V Input Voltage Range VFB −0.3 to VSD V Total Power Dissipation PD 95 W Derating 1.32 W/ °C Operating Ambient Temperature TA −25 to +85 °C Storage Temperature TSTG −55 to +150 °C |
类似零件编号 - KA1M0880BF-TU |
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类似说明 - KA1M0880BF-TU |
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