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IRF1503 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF1503 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF1503, IIRF1503 · FEATURES · Static drain-source on-resistance: RDS(on) ≤3.3mΩ · Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA) · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · reliable device for use in a wide variety of applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 960 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.75 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
类似零件编号 - IRF1503 |
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类似说明 - IRF1503 |
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