GT50J121 datasheet(4/6 Pages) TOSHIBA

部件名	GT50J121

功能描述	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

GT50J121

2002-03-18

4

Collector current IC (A)

Switching time ton, tr, td (on) – IC

Gate resistance RG (Ω)

Switching time toff, tf, td (off) – RG

Gate resistance RG (Ω)

Switching loss Eon, Eoff – RG

Gate resistance RG (Ω)

Switching time ton, tr, td (on) – RG

Collector current IC (A)

Switching loss Eon, Eoff – IC

Collector current IC (A)

Switching time toff, tf, td (off) – IC

td (on)

tr

0

10

20

30

40

50

0.01

0.03

0.3

1

3

10

0.1

Common emitter

VCC = 300 V

VGG = 15 V

RG = 13 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

ton

0

10

20

30

40

50

0.01

0.03

0.3

1

3

10

0.1

Common emitter

VCC = 300 V

VGG = 15 V

RG = 13 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

td (off)

toff

tf

1

3

10

30

100

1000

0.1

0.3

1

3

10

30

300

Common emitter

VCC = 300 V

VGG = 15 V

IC = 50 A

: Tc

= 25°C

: Tc

= 125°C

(Note 2)

Eoff

Eon

1

3

10

30

100

1000

0.01

0.03

0.3

1

3

10

0.1

300

td (on)

ton

tr

Common emitter

VCC = 300 V

VGG = 15 V

IC = 50 A

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

1

0

10

20

30

40

50

0.1

3

10

Common emitter

VCC = 300 V

VGG = 15 V

RG = 13 Ω

: Tc

= 25°C

: Tc

= 125°C

(Note 2)

0.3

Eoff

Eon

1

3

10

30

100

1000

0.01

0.03

0.3

1

3

10

0.1

300

toff

td (off)

tf

Common emitter

VCC = 300 V

VGG = 15 V

IC = 50 A

: Tc

= 25°C

: Tc

= 125°C

(Note 1)

类似零件编号 - GT50J121

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	GT50J121	190Kb / 6P	Silicon N Channel IGBT High Power Switching Applications
	GT50J121	1Mb / 73P	Bipolar Small-Signal Transistors
	GT50J121	190Kb / 6P	Silicon N Channel IGBT High Power Switching Applications

More results

类似说明 - GT50J121

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	GT8G132	338Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M323	193Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT20J101	259Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT15M321	269Kb / 6P	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT60M322	191Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT15Q311	172Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT40G121	151Kb / 5P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT80J101B	69Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT50G321	287Kb / 6P	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT50J325	170Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

More results

GT50J121 数据表(PDF) 4 Page - Toshiba Semiconductor

GT50J121 数据表(HTML) 4 Page - Toshiba Semiconductor

类似零件编号 - GT50J121

类似说明 - GT50J121

Html Pages

1 2 3 4 5 6

数据表下载

链接网址

GT50J121 数据表(PDF) 4 Page - Toshiba Semiconductor

GT50J121 数据表(HTML) 4 Page - Toshiba Semiconductor

类似零件编号 - GT50J121

类似说明 - GT50J121

Html Pages

1 2 3 4 5 6

数据表 下载

链接网址

数据表下载