TPV65R080C, TPW65R080C

V3.0

www.tsinghuaicwx.com

Wuxi Unigroup Microelectronics Company

Specifications T

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

650

--

--

V

Zero Gate Voltage Drain Current

I

DSS

V

C

--

--

1

μA

V

--

--

100

Gate-Source Leakage

I

GSS

V

--

--

±100

nA

Gate-Source Threshold Voltage

V

GS(th)

V

2.5

--

4.5

V

Drain-Source On-Resistance (Note3)

R

DS(on)

V

--

65

80

mΩ

Forward Transconductance

(Note3)

g

fs

V

--

40

--

S

Dynamic

Input Capacitance

C

iss

V

V

f = 1.0MHz

--

5098

--

pF

Output Capacitance

C

oss

--

225

--

Reverse Transfer Capacitance

C

rss

--

6.2

--

Total Gate Charge

Q

g

V

V

--

90

--

nC

Gate-Source Charge

Q

gs

--

24

--

Gate-Drain Charge

Q

gd

--

30

--

Turn-on Delay Time

t

d(on)

V

R

--

16

--

ns

Turn-on Rise Time

t

r

--

12

--

Turn-off Delay Time

t

d(off)

--

83

--

Turn-off Fall Time

t

f

--

5

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

I

S

T

C

--

--

47

A

Pulsed Diode Forward Current

I

SM

--

--

141

Body Diode Voltage

V

SD

T

C, I

--

0.9

1.2

V

Reverse Recovery Time

t

rr

V

di

--

720

--

ns

Reverse Recovery Charge

Q

rr

--

19

--

μC

Peak Reverse Recovery Current

I

rrm

--

52

--

A

Notes

1.

Repetitive Rating: Pulse Width limited by maximum junction temperature

2.

I

3.

Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 1%

2