TSM150P04LCS datasheet(4/6 Pages) TSC

部件名	TSM150P04LCS

功能描述	Low gate charge for fast power switching

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制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

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4 / 6 page

TSM150P04LCS

Taiwan Semiconductor

4

Version: A1611

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage

BVDSS vs. Junction Temperature

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

Normalized Thermal Transient Impedance, Junction-to-Case

t, Square Wave Pulse Duration (sec)

-VDS, Drain to Source Voltage (V)

TJ, Junction Temperature (°C)

-VSD, Body Diode Forward Voltage (V)

-VDS, Drain to Source Voltage (V)

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

25℃

150℃

-55℃

0

500

1000

1500

2000

2500

3000

3500

4000

0

10

20

30

40

CISS

COSS

CRSS

0.01

0.1

1

10

0.0001

0.001

0.01

0.1

1

10

SINGLE PULSE

RӨJC=10°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

Notes:

Duty = t

1 / t2

T

J = TC + PDM x Z

ӨJC x RӨJC

0.8

0.9

1

1.1

1.2

-75

-50

-25

0

25

50

75

100 125 150

I

D=-1mA

0.1

1

10

100

0.1

1

10

100

R

DS(ON)

SINGLE PULSE

RӨJC=10°C/W

T

C=25°C

类似零件编号 - TSM150P04LCS

制造商	部件名	数据表	功能描述
Taiwan Semiconductor Co...	TSM150P03	393Kb / 6P	P-Channel Power MOSFET
	TSM150P03PQ33	354Kb / 6P	TSM150P03PQ33
	TSM150P03PQ33RGG	393Kb / 6P	P-Channel Power MOSFET

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类似说明 - TSM150P04LCS

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