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TSM120NA03CR 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

部件名 TSM120NA03CR
功能描述  Low gate charge for fast power switching
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSM120NA03CR 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM120NA03CR
Taiwan Semiconductor
1
Version: B1610
N-Channel Power MOSFET
30V, 39A, 11.7m
Ω
FEATURES
● Low R
DS(ON) to minimize conductive loss
● Low gate charge for fast power switching
● 100% UIS and R
g tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● ORing FET/Load Switch
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
30
V
RDS(on)
(max)
VGS = 10V
11.7
m
Ω
VGS = 4.5V
14.9
Qg
4.5
nC
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
(Note 1)
TC = 25°C
ID
39
A
TA = 25°C
11
Pulsed Drain Current
IDM
156
A
Single Pulse Avalanche Current
(Note 2)
IAS
15.6
A
Single Pulse Avalanche Energy
(Note 2)
EAS
36.5
mJ
Total Power Dissipation
TC = 25°C
PD
33
W
TC = 125°C
6.6
Total Power Dissipation
TA = 25°C
PD
2.6
W
TA = 125°C
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.8
°C/W
Junction to Ambient Thermal Resistance
RӨJA
48
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.


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