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TSM120NA03CR 数据表(PDF) 3 Page - Taiwan Semiconductor Company, Ltd

部件名 TSM120NA03CR
功能描述  Low gate charge for fast power switching
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制造商  TSC [Taiwan Semiconductor Company, Ltd]
网页  http://www.taiwansemi.com
标志 TSC - Taiwan Semiconductor Company, Ltd

TSM120NA03CR 数据表(HTML) 3 Page - Taiwan Semiconductor Company, Ltd

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TSM120NA03CR
Taiwan Semiconductor
3
Version: B1610
0
6
12
18
24
30
0
1
2
3
4
25℃
-55℃
150℃
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
Qg, Gate Charge (nC)
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage (V)
0
6
12
18
24
30
0
1
2
3
4
V
GS=10V
V
GS=7V
V
GS=5V
V
GS=4.5V
V
GS=4V
V
GS=3.5V
V
GS=3V
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0
6
12
18
24
30
V
GS=10V
V
GS=4.5V
0
2
4
6
8
10
0
2
4
6
8
10
V
DS=15V
I
D=11A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-75
-50
-25
0
25
50
75
100
125
150
V
GS=10V
I
D=11A
0
0.005
0.01
0.015
0.02
0.025
0.03
3
4
5
6
7
8
9
10
I
D=11A


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