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MTB014N15RH8-0-T6-G 数据表(PDF) 5 Page - Cystech Electonics Corp. |
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MTB014N15RH8-0-T6-G 数据表(HTML) 5 Page - Cystech Electonics Corp. |
5 / 10 page CYStech Electronics Corp. Spec. No. : C024H8 Issued Date : 2017.12.08 Revised Date : Page No. : 5/10 MTB014N15RH8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 1020 30 4050 6070 80 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 0 10 203040 5060 7080 Qg, Total Gate Charge(nC) ID=20A VDS=30V, 75V, 120V from left to right Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs RDSON Limited TA=25°C, VGS=10V, Tj=150°C,RθJA=50°C/W Single Pulse 1s Maximum Drain Current vs Junction Temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=10V, Tj(max)=150°C, RθJA=50°C/W |
类似零件编号 - MTB014N15RH8-0-T6-G |
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类似说明 - MTB014N15RH8-0-T6-G |
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