HZU5.6B1 datasheet(4/11 Pages) RENESAS

部件名	HZU5.6B1

功能描述	Silicon Epitaxial Planar Zener Diodes for Stabilizer

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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4 / 11 page

HZU Series

Rev.7, Dec. 2002, page 2 of 9

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Power dissipation

Pd *

1

200

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55 to +150

°C

Note:

1. With P.C. Board.

Electrical Characteristics

(Ta = 25°C)

Zener Voltage

Reverse Current

Dynamic Resistance

V

Z (V) *

1

Test

Condition

I

R (µ

µµµA)

Test

Condition

r

d (Ω

Ω

Ω)

Test

Condition

Type

Grade

Min

Max

I

Z (mA)

Max

V

R (V)

Max

I

Z (mA)

HZU2.0

B

1.90

2.20

5

120

0.5

100

5

HZU2.2

B

2.10

2.40

5

120

0.7

100

5

HZU2.4

B

2.30

2.60

5

120

1.0

100

5

HZU2.7

B

2.50

2.90

5

120

1.0

110

5

B1

2.50

2.75

B2

2.65

2.90

HZU3.0

B

2.80

3.20

5

50

1.0

120

5

B1

2.80

3.05

B2

2.95

3.20

HZU3.3

B

3.10

3.50

5

20

1.0

130

5

B1

3.10

3.35

B2

3.25

3.50

HZU3.6

B

3.40

3.80

5

10

1.0

130

5

B1

3.40

3.65

B2

3.55

3.80

HZU3.9

B

3.70

4.10

5

10

1.0

130

5

B1

3.70

3.97

B2

3.87

4.10

Note:

1. Tested with pulse (P

W = 40 ms).

类似零件编号 - HZU5.6B1

制造商	部件名	数据表	功能描述
Renesas Technology Corp	HZU5.6	103Kb / 10P	Old Company Name in Catalogs and Other Documents
	HZU5.6G	56Kb / 5P	Silicon Planar Zener Diode for Surge Absorption
	HZU5.6Z	156Kb / 6P	Silicon Epitaxial Planar Zener Diode for Surge Absorb

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类似说明 - HZU5.6B1

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