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BC636-16 数据表(PDF) 1 Page - ON Semiconductor

部件名 BC636-16
功能描述  High Current Transistors
Download  4 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BC636-16 数据表(HTML) 1 Page - ON Semiconductor

  BC636-16 Datasheet HTML 1Page - ON Semiconductor BC636-16 Datasheet HTML 2Page - ON Semiconductor BC636-16 Datasheet HTML 3Page - ON Semiconductor BC636-16 Datasheet HTML 4Page - ON Semiconductor  
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© Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 1
1
Publication Order Number:
BC636/D
BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC636
BC638
BC640
VCEO
–45
–60
–80
Vdc
Collector-Base Voltage
BC636
BC638
BC640
VCBO
–45
–60
–80
Vdc
Emitter-Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–0.5
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
θJA
200
°C/W
Thermal Resistance,
Junction to Case
R
θJC
83.3
°C/W
Device
Package
Shipping
ORDERING INFORMATION
BC636
TO–92
http://onsemi.com
CASE 29
TO–92
STYLE 14
5000 Units/Box
3
2
1
BC636ZL1
TO–92
2000/Ammo Pack
COLLECTOR
2
3
BASE
1
EMITTER
BC636–16ZL1
TO–92
2000/Ammo Pack
BC638
TO–92
5000 Units/Box
BC638ZL1
TO–92
2000/Ammo Pack
BC640
TO–92
5000 Units/Box
BC640ZL1
TO–92
2000/Ammo Pack
BC640–16
TO–92
5000 Units/Box


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