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TPC6002 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 TPC6002
功能描述  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPC6002 数据表(HTML) 2 Page - Toshiba Semiconductor

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TPC6002
2001-11-07
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
¾
¾
10
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
¾
¾
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = -20 V
15
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
¾
2.5
V
RDS (ON)
VGS = 4.5 V, ID = 3 A
¾
36
50
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
¾
25
30
m
W
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
3.5
10
¾
S
Input capacitance
Ciss
¾
610
¾
Reverse transfer capacitance
Crss
¾
105
¾
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
151
¾
pF
Rise time
tr
¾
3
¾
Turn-ON time
ton
¾
9
¾
Fall time
tf
¾
9
¾
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 ms
¾
27
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
13
¾
Gate-source charge
Qgs
¾
10
¾
Gate-drain (“miller”) charge
Qgd
VDD ~- 24 V, VGS = 10 V, ID = 6 A
¾
3
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
24
A
Forward voltage (Diode)
VDSF
IDR = 6 A, VGS = 0 V
¾
¾
-1.2
V
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t
= 5 s)
(b) Device mounted on a glass-epoxy board (b) (t
= 5 s)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 3.0 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking
“·” locates on the left lower side of parts number marking “S2B” indicates terminal
No.1.
(a)
FR-4
25.4
´ 25.4 ´ 0.8
Unit: (mm)
(b)
FR-4
25.4
´ 25.4 ´ 0.8
Unit: (mm)
VDD ~- 15 V
0 V
VGS
10 V
ID = 3 A
VOUT


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