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TPC6002 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TPC6002 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TPC6002 2001-11-07 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ¾ ¾ 10 mA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ¾ ¾ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = -20 V 15 ¾ ¾ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ¾ 2.5 V RDS (ON) VGS = 4.5 V, ID = 3 A ¾ 36 50 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ¾ 25 30 m W Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.5 10 ¾ S Input capacitance Ciss ¾ 610 ¾ Reverse transfer capacitance Crss ¾ 105 ¾ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 151 ¾ pF Rise time tr ¾ 3 ¾ Turn-ON time ton ¾ 9 ¾ Fall time tf ¾ 9 ¾ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 ms ¾ 27 ¾ ns Total gate charge (gate-source plus gate-drain) Qg ¾ 13 ¾ Gate-source charge Qgs ¾ 10 ¾ Gate-drain (“miller”) charge Qgd VDD ~- 24 V, VGS = 10 V, ID = 6 A ¾ 3 ¾ nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Pulse drain reverse current (Note 1) IDRP ¾ ¾ ¾ 24 A Forward voltage (Diode) VDSF IDR = 6 A, VGS = 0 V ¾ ¾ -1.2 V Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 3.0 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: Black round marking “·” locates on the left lower side of parts number marking “S2B” indicates terminal No.1. (a) FR-4 25.4 ´ 25.4 ´ 0.8 Unit: (mm) (b) FR-4 25.4 ´ 25.4 ´ 0.8 Unit: (mm) VDD ~- 15 V 0 V VGS 10 V ID = 3 A VOUT |
类似零件编号 - TPC6002 |
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类似说明 - TPC6002 |
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