EC732320 datasheet(2/6 Pages) E-CMOS

部件名	EC732320

功能描述	20V, 800mA N-Channel MOSFET

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制造商	E-CMOS [E-CMOS Corporation]

网页	http://www.ecmos.com.tw/

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2 / 6 page

EC732320

20V、

、

、800mA N-Channel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 6

4K24N-Rev.F001

ELECTRICAL CHARACTERISTICS (TA=25℃

℃

℃ unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250µA

20

V

BVDSS Temperature Coefficient

△BVDSS /△TJ

Reference to 25℃ ,

ID=1mA

-0.01

V/℃

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

1

µA

Gate-Body Leakage Current

IGSS

VGS=±6V,VDS=0V

±20

uA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250µA

0.3

0.6

1

V

VGS(th) Temperature Coefficient

△VGS(th)

VDS=VGS,ID=250µA

3

mV/℃

VGS=4.5V, ID=0.5A

200

300

VGS=2.5V, ID=0.4A

235

400

VGS=1.8V, ID=0.2A

295

500

VGS=1.5V, ID=0.1A

365

800

Drain-Source On-State Resistance

RDS(ON)

VGS=1.2V, ID=0.1A

600

1500

mΩ

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

38.2

75

Output Capacitance

Coss

14.4

28

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

6

12

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

5

10

Turn-on Rise Time

tr

3.5

7

Turn-Off Delay Time

td(off)

14

28

Turn-Off Fall Time

tf

VDD=10V,ID=0.5A

VGS=4.5V,RGEN=10

Ω

6

12

nS

Total Gate Charge

Qg

1

2

Gate-Source Charge

Qgs

0.26

0.5

Gate-Drain Charge

Qgd

VDS=10V,ID=0.5A,

VGS=4.5V

0.2

0.4

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=0.2A

0.8

1

V

Diode Forward Current (Note 2)

IS

VG=VD=0V , Force

Current

800

mA

类似零件编号 - EC732320

制造商	部件名	数据表	功能描述
E-CMOS Corporation	EC732301	512Kb / 6P	P chanel MOSFET
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	EC732302B1R	757Kb / 6P	20V, 2.4A N-Channel MOSFET
	EC732315	477Kb / 4P	P-Channel MOS

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类似说明 - EC732320

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