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SI5513DC-T1-E3 数据表(PDF) 6 Page - Vishay Siliconix |
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SI5513DC-T1-E3 数据表(HTML) 6 Page - Vishay Siliconix |
6 / 7 page Si5513DC Vishay Siliconix www.vishay.com 6 Document Number: 71186 S-42138—Rev. F, 15-Nov-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS = 10 V ID = 2.1 A VGS = 4.5 V ID = 2.1 A Gate Charge Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 1234 5 TJ = 150_C ID = 2.1 A 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) TJ = 25_C 0 30 50 10 20 Single Pulse Power Time (sec) 40 1 100 600 10 10−1 10−2 10−4 10−3 −0.2 −0.1 0.0 0.1 0.2 0.3 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ − Temperature (_C) |
类似零件编号 - SI5513DC-T1-E3 |
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类似说明 - SI5513DC-T1-E3 |
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