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74LVT125BQ 数据表(PDF) 4 Page - NXP Semiconductors |
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74LVT125BQ 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 15 page 9397 750 14703 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 — 10 February 2005 4 of 15 Philips Semiconductors 74LVT125 3.3 V quad buffer; 3-state 7. Functional description 7.1 Function table [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. 8. Limiting values [1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. [2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. Table 4: Function table [1] Input Output nOE nA nY LLL LH H HX Z Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V VI input voltage [1] −0.5 +7.0 V VO output voltage output in OFF-state or HIGH-state [1] −0.5 +7.0 V IIK input diode current VI <0V - −50 mA IOK output diode current VO <0V - −50 mA IO output current output in LOW-state - 128 mA output in HIGH-state - −64 mA Tstg storage temperature −65 +150 °C Tj junction temperature [2] - 150 °C |
类似零件编号 - 74LVT125BQ |
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类似说明 - 74LVT125BQ |
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