SI7501DN datasheet(7/8 Pages) VISHAY

部件名	SI7501DN

功能描述	Complementary 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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7 / 8 page

Si7501DN

Vishay Siliconix

Document Number: 72173

S-32419—Rev. B, 24-Nov-03

www.vishay.com

7

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.00

0.04

0.08

0.12

0.16

0

2468

10

TJ = 150_C

ID = 7.7 A

30

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

TJ = 25_C

0

30

50

10

20

Single Pulse Power

Time (sec)

40

−0.8

−0.6

−0.4

−0.2

−0.0

0.2

0.4

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

Threshold Voltage

TJ − Temperature (_C)

1

100

600

10

10−1

10−2

10−3

Safe Operating Area

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

P(t) = 10

dc

0.1

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

类似零件编号 - SI7501DN

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7501DN	120Kb / 9P	Complementary 30-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7501DN-T1-E3	565Kb / 15P	Complementary 30-V (D-S) MOSFET Rev. D, 07-Jul-08

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类似说明 - SI7501DN

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