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AM4411P 数据表(PDF) 1 Page - Analog Power |
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AM4411P 数据表(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM4411P P-Channel 150-V (D-S) MOSFET VDS (V) ID (A) -1.5 -1.4 Symbol Limit Units VDS -150 VGS ±20 TA=25°C -1.5 TA=70°C -1.3 IDM -6 IS 1.5 A TA=25°C 3.1 TA=70°C 2.2 TJ, Tstg -55 to 150 °C Symbol Maximum Units 40 80 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Continuous Drain Current a Gate-Source Voltage PRODUCT SUMMARY -150 rDS(on) (mΩ) 900 @ VGS = -10V 1000 @ VGS = -4.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits SO-8 © Preliminary 1 Publication Order Number: DS_AM4411P_1A |
类似零件编号 - AM4411P |
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类似说明 - AM4411P |
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