TSAL6100_14 datasheet(2/5 Pages) VISHAY

部件名	TSAL6100

功能描述	High Power Infrared Emitting Diode

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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TSAL6100

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 13-Mar-14

2

Document Number: 81009

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

0

20

40

60

80

100

120

140

160

180

0

1020

3040506070

8090100

21211

Tamb - Ambient Temperature (°C)

RthJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

Tamb - Ambient Temperature (°C)

21212

RthJA = 230 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.35

1.6

V

IF = 1 A, tp = 100 μs

VF

2.2

3

V

Temperature coefficient of VF

IF = 1 mA

TKVF

-1.8

mV/K

Reverse current

VR = 5 V

IR

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

40

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

80

170

400

mW/sr

IF = 1 A, tp = 100 μs

Ie

650

1450

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φe

40

mW

Temperature coefficient of

φe

IF = 20 mA

TK

φe

-0.6

%/K

Angle of half intensity

ϕ

± 10

deg

Peak wavelength

IF = 100 mA

λp

940

nm

Spectral bandwidth

IF = 100 mA

Δλ

30

nm

Temperature coefficient of

λp

IF = 100 mA

TK

λp

0.2

nm/K

Rise time

IF = 100 mA

tr

15

ns

Fall time

IF = 100 mA

tf

15

ns

类似零件编号 - TSAL6100_14

制造商	部件名	数据表	功能描述
Vishay Siliconix	TSAL6100UL	116Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW Rev. 1.0, 16-Jun-16
	TSAL6100UL	113Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL6100UL	114Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023
	TSAL6100UL	113Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2022
	TSAL6100UL	114Kb / 5P	High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 01-Jan-2023

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类似说明 - TSAL6100_14

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