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BC847PNW 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BC847PNW 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 6 page Elektronische Bauelemente BC847PNW NPN / PNP Multi-Chip Transistor 24-Dec-2014 Rev. A Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS OF NPN (T A=25°C unless otherwise noted) CHARACTERISTIC SYMBOL MIN. Min. MAX. UNIT TEST CONDITION Collector-Base Breakdown Voltage V(BR)CBO 50 - - V IC=10µA Collector–Emitter Breakdown Voltage V(BR)CES 50 - - V IC=10µA, VEB = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 45 - - V IC=10mA Emitter-Base Breakdown Voltage V(BR)EBO 6 - - V IE=1µA - - 15 nA VCB=30V Collector Cutoff Current ICBO - - 5 µA VCB=30V, TA=150°C hFE(1) - 150 - VCE=5V, IC=10µA DC Current Gain hFE(2) 200 290 475 VCE=5V, IC=2mA - - 0.25 V IC=10mA, IB=0.5mA Collector-emitter Saturation Voltage VCE(sat) - - 0.6 V IC=100mA, IB=5mA - 0.7 - V IC=10mA, IB=0.5mA Base-Emitter Saturation Voltage VBE(sat) - 0.9 - V IC=100mA, IB=5mA 580 660 700 IC=2mA, VCE =5V Base–Emitter Voltage VBE(ON) - - 770 mV IC=10mA, VCE =5V Transition Frequency fT 100 - - MHz VCE=5V, IC=10mA, f=100MHz Output Capacitance Cobo - - 4.5 pF VCB=10V, f=1MHz Noise Figure NF - - 10 dB VCE=5V, IC=0.2mA, f=1kHz Rs=2K , BW=200Hz |
类似零件编号 - BC847PNW |
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类似说明 - BC847PNW |
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