数据搜索系统,热门电子元器件搜索 |
|
TPIC3302 数据表(PDF) 2 Page - Texas Instruments |
|
TPIC3302 数据表(HTML) 2 Page - Texas Instruments |
2 / 11 page TPIC3302 3-CHANNEL COMMON-DRAIN POWER DMOS ARRAY SLIS021B – APRIL 1994 – REVISED JULY 1995 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 2–2 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, VDS = VGS 1.5 1.85 2.2 V V(BR) Reverse drain-to-GND breakdown voltage (across D1) Drain-to-GND current = 250 µA 100 V VDS(on) Drain-to-source on-state voltage ID = 1 A, See Notes 2 and 3 VGS = 10 V, 0.4 0.475 V VF Forward on-state voltage, GND-to-drain ID = 1 A, See Notes 2 and 3 2 V VF(SD) Forward on-state voltage, source-to-drain IS = 1 A, VGS = 0, See Notes 2 and 3 0.9 1.1 V IDSS Zero gate voltage drain current VDS = 48 V, TC = 25°C 0.05 1 µA IDSS Zero-gate-voltage drain current DS , VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 16 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short circuited to source VSG = 16 V, VDS = 0 10 100 nA Ilk Leakage current drain to GND VR =48V TC = 25°C 0.05 1 µA Ilkg Leakage current, drain-to-GND VR = 48 V TC = 125°C 0.5 10 µA rDS( ) Static drain to source on state resistance VGS = 10 V, ID = 1 A, TC = 25°C 0.4 0.475 Ω rDS(on) Static drain-to-source on-state resistance D , See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.63 0.7 Ω gfs Forward transconductance VDS = 10 V, See Notes 2 and 3 ID = 0.5 A, 0.85 1.02 S Ciss Short-circuit input capacitance, common source 115 145 Coss Short-circuit output capacitance, common source VDS = 25 V, VGS = 0, 60 75 pF Crss Short-circuit reverse-transfer capacitance, common source f = 1 MHz 30 40 F NOTES: 2. Technique should limit TJ – TC to 10°C maximum, pulse duration ≤ 5 ms. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr(SD) Reverse-recovery time IS = 0.5 A, VGS = 0, VDS = 48 V, 35 ns QRR Total diode charge SGS di/dt = 100 A/ µs, DS See Figure 1 0.03 µC GND-to-drain diode characteristics, TC = 25°C (see schematic, D1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr Reverse-recovery time IF = 0.5 A, VDS = 48 V, 90 ns QRR Total diode charge F di/dt = 100 A/ µs, DS See Figure 1 0.2 µC |
类似零件编号 - TPIC3302 |
|
类似说明 - TPIC3302 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |