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STN488DN 数据表(PDF) 2 Page - Stanson Technology

部件名 STN488DN
功能描述  N Channel Enhancement Mode MOSFET
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制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology

STN488DN 数据表(HTML) 2 Page - Stanson Technology

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STN488DN
N Channel Enhancement Mode MOSFET
100A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN488DN 2016 V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=100℃
ID
100
63
A
Pulsed Drain Current
IDM
400
A
Continuous Source Current (Diode Conduction)
IS
100
A
Power Dissipation
TA=25℃
PD
135
W
Operation Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
62
℃
/W


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