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STN444DN 数据表(PDF) 3 Page - Stanson Technology |
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STN444DN 数据表(HTML) 3 Page - Stanson Technology |
3 / 8 page STN444DN N Channel Enhancement Mode MOSFET 100A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN444DN 2016 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.3 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 uA VDS=30V,VGS=0V TJ=55℃ 10 Drain-source On- Resistance RDS(on) VGS=10V,ID=10A VGS=4.5V,ID=20A 2.6 3.4 3.3 4.3 mΩ Forward Transconductance gfs VDS=15V,ID=10A 65 S Diode Forward Voltage VSD IS=1.0A,VGS=0V 1.0 V Dynamic Total Gate Charge Qg VDS=15V,VGS=10V ID≡15A 60 nC Gate-Source Charge Qgs 14 Gate-Drain Charge Qgd 23.5 Input Capacitance Ciss VDS =15V,VGS=0V F=1MHz 5850 pF Output Capacitance Coss 720 Reverse TransferCapacitance Crss 525 Turn-On Time td(on) tr ID≡1A , VDD=15V, VGS=10V, RG=3.3V 20 nS 6.3 Turn-Off Time td(off) tf 125 15.8 |
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