2SC2703 datasheet(2/6 Pages) FOSHAN

部件名	2SC2703

功能描述	Silicon NPN transistor in a TO-92LM Plastic Package

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制造商	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

网页	http://www.fsbrec.com/

标志

2 / 6 page

2SC2703

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC

1.0

A

Emitter Current

IE

-1.0

A

Collector Power Dissipation

PC

900

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

30

V

Collector Cut-Off Current

ICBO

VCB=30V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE(1)

VCE=2.0V

IC=100mA

100

320

hFE(2)

VCE=2.0V

IC=800mA

40

Collector to Emitter Saturation

Voltage

VCE(sat) IC=800mA

IB=80mA

0.5

V

Base to Emitter Voltage

VBE

VCE=2.0V

IC=800mA

0.9

1.5

V

Transition Frequency

fT

VCE=2.0V

IC=100mA

150

MHz

Collector output capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

13

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

类似零件编号 - 2SC2703

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC2703	148Kb / 2P	TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)
Toshiba Semiconductor	2SC2703	109Kb / 4P	Silicon NPN Epitaxial Type (PCT Process)
SHENZHEN YONGERJIA INDU...	2SC2703	125Kb / 1P	TRANSISTOR (NPN)
Jiangsu Changjiang Elec...	2SC2703	6Mb / 3P	TO-92L Plastic-Encapsulate Transistors
Toshiba Semiconductor	2SC2703	109Kb / 4P	Silicon NPN Epitaxial Type (PCT Process)

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类似说明 - 2SC2703

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