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74LVC1G58GV 数据表(PDF) 11 Page - NXP Semiconductors

部件名 74LVC1G58GV
功能描述  Low-power configurable multiple function gate
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

74LVC1G58GV 数据表(HTML) 11 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 15 September 2004
11 of 18
Philips Semiconductors
74LVC1G58
Low-power configurable multiple function gate
[1]
Typical values are measured at Tamb =25 °C.
15. Waveforms transfer characteristics
VH
hysteresis voltage (VT+ − VT−)
see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.30
0.48
0.62
V
VCC = 2.3 V
0.40
0.64
0.80
V
VCC = 3.0 V
0.50
0.75
1.00
V
VCC = 4.5 V
0.71
0.97
1.20
V
VCC = 5.5 V
0.71
1.13
1.40
V
Tamb = −40 °C to +125 °C
VT+
positive-going threshold
voltage
see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.67
-
1.20
V
VCC = 2.3 V
1.08
-
1.60
V
VCC = 3.0 V
1.47
-
2.00
V
VCC = 4.5 V
2.13
-
2.74
V
VCC = 5.5 V
2.58
-
3.33
V
VT−
negative-going threshold
voltage
see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.30
-
0.75
V
VCC = 2.3 V
0.58
-
1.03
V
VCC = 3.0 V
0.80
-
1.33
V
VCC = 4.5 V
1.21
-
1.93
V
VCC = 5.5 V
1.45
-
2.32
V
VH
hysteresis voltage (VT+ − VT−)
see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.23
-
0.62
V
VCC = 2.3 V
0.34
-
0.80
V
VCC = 3.0 V
0.44
-
1.00
V
VCC = 4.5 V
0.65
-
1.20
V
VCC = 5.5 V
0.65
-
1.40
V
Table 13:
Transfer characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VT+ and VT− limits are at 70 % and
20 %.
Fig 13. Transfer characteristics.
Fig 14. Definition of VT+, VT− and VH.
mna207
VO
VI
VH
VT+
VT−
mna208
VO
VI
VH
VT+
VT−


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