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S5D9 数据表(PDF) 89 Page - Renesas Technology Corp |
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S5D9 数据表(HTML) 89 Page - Renesas Technology Corp |
89 / 115 page R01DS0303EU0100 Rev.1.00 Page 89 of 115 Nov 3, 2016 S5D9 2. Electrical Characteristics Figure 2.87 USB_DP and USB_DM output timing in low-speed mode Figure 2.88 Test circuit in low-speed mode Pull-up and pull- down characteristics USB_DP and USB_DM pull- down resistance in host controller mode Rpd 14.25 - 24.80 kΩ - Table 2.39 USBFS full-speed characteristics (USB_DP and USB_DM pin characteristics) Conditions: VCC = AVCC0 = VCC_USB = VBATT = 3.0 to 3.6 V, 2.7 ≤ VREFH0/VREFH ≤ AVCC0, VCC_USBHS = AVCC_USBHS = 3.0 to 3.6 V, UCLK = 48 MHz Item Symbol Min Typ Max Unit Test conditions Input characteristics Input high voltage VIH 2.0 - - V - Input low voltage VIL -- 0.8 V - Differential input sensitivity VDI 0.2 - - V | USB_DP - USB_DM | Differential common-mode range VCM 0.8 - 2.5 V - Output characteristics Output high voltage VOH 2.8 - 3.6 V IOH = –200 μA Output low voltage VOL 0.0 - 0.3 V IOL= 2 mA Cross-over voltage VCRS 1.3 - 2.0 V Figure 2.89 Rise time tLR 4 - 20 ns Fall time tLF 4 - 20 ns Rise/fall time ratio tLR / tLF 90 - 111.11 % tFR/ tFF Output resistance ZDRV 28 - 44 Ω USBFS: Rs = 27 Ω included Pull-up and pull- down characteristics DM pull-up resistance in device controller mode Rpu 0.900 - 1.575 kΩ During idle state 1.425 - 3.090 kΩ During transmission and reception USB_DP and USB_DM pull- down resistance in host controller mode Rpd 14.25 - 24.80 kΩ - Table 2.38 USBFS low-speed characteristics for host only (USB_DP and USB_DM pin characteristics) (2 of 2) Conditions: VCC = AVCC0 = VCC_USB = VBATT = 3.0 to 3.6V, 2.7 ≤ VREFH0/VREFH ≤ AVCC0, VCC_USBHS = AVCC_USBHS = 3.0 to 3.6 V, UCLK = 48 MHz Item Symbol Min Typ Max Unit Test conditions USB_DP, USB_DM tLF tLR 90% 10% 10% 90% VCRS Observation point 200 pF to 600 pF USB_DP USB_DM 200 pF to 600 pF 1.5 K 3.6 V 27 |
类似零件编号 - S5D9 |
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类似说明 - S5D9 |
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