2SK2225-80-E_16 datasheet(3/7 Pages) RENESAS

部件名	2SK2225-80-E

功能描述	1500V - 2A - MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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3 / 7 page

2SK2225-80-E

R07DS1275EJ0200 Rev.2.00

Page 3 of 6

Aug 02, 2016

Main Characteristics

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Drain Current (Typical)

10

3

1

0.3

0.1

0.03

0.01

10

30

100

300

1000 3000 10000

Operation in this area is

limited by RDS(on)

Tc = 25

°C

1 shot

10

μs

5

4

3

2

1

0

20

40

60

80

100

7 V

6 V

5 V

Pulse Test

Ta = 25

°C

VGS = 4 V

8 V

2.0

1.6

1.2

0.8

0.4

0

Tc = 75

°C

25

°C

–25

°C

VDS = 25 V

Pulse Test

246

8

10

0.1

50

20

10

2

5

1

0.5

0.2

0.5

1

2

5

10

VGS = 15 V

Ta = 25

°C

Pulse Test

15 V

10 V

PW = 100

μs

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature (Typical)

Reverse Drain Current IDR (A)

Body to Drain Diode Reverse

Recovery Time (Typical)

20

16

12

8

4

–40

0

40

80

120

160

0

0.5 A, 1 A

ID = 2 A

VGS = 15 V

Pulse Test

5000

2000

1000

200

500

100

50

0.05

0.1

0.2

0.5

1

2

5

di / dt = 100 A /

μs

VGS = 0, Ta = 25°C

Pulse Test

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