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SI4896DY 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4896DY 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Si4896DY Vishay Siliconix Document Number: 71300 S-03950—Rev. B, 26-May-03 www.vishay.com 1 N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 80 0.0165 @ VGS = 10 V 9.5 80 0.022 @ VGS = 6.0 V 8.3 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 D G S N-Channel MOSFET Ordering Information: Si4896DY Si4896DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 9.5 6.7 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 7.6 5.4 Pulsed Drain Current IDM 50 A Avalanch Current L = 0.1 mH IAS 40 Continuous Source Current (Diode Conduction)a IS 2.8 1.4 Maximum Power Dissipationa TA = 25_C PD 3.1 1.56 W Maximum Power Dissipationa TA = 70_C PD 2.0 1.0 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 33 40 Maximum Junction-to-Ambienta Steady State RthJA 65 80 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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