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SI4480EY-T1 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4480EY-T1 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si4480EY Vishay Siliconix www.vishay.com 2-2 Document Number: 71060 S-03951—Rev. B, 26-May-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typb Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 55_C 20 mA On-State Drain Currena ID(on) VDS = 5 V, VGS = 10 V 20 A Drain Source On State Resistancea rDS( ) VGS = 10 V, ID = 6.2 A 0.026 0.035 W Drain-Source On-State Resistancea rDS(on) VGS = 6.0 V, ID = 5.8 A 0.030 0.040 W Forward Transconductancea gfs VDS = 15 V, ID = 6.2 A 25 S Diode Forward Voltagea VSD IS = 2.1 A, VGS = 0 V 1.2 V Dynamicb Total Gate Charge Qg 30 50 Gate-Source Charge Qgs VDS = 40 V, VGS = 10 V, ID = 6.2 A 9 nC Gate-Drain Charge Qgd 5.6 Gate Resistance Rg 1.5 4.0 W Turn-On Delay Time td(on) 12.5 25 Rise Time tr VDD = 40 V, RL = 30 W 12.5 25 Turn-Off Delay Time td(off) VDD = 40 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 52 80 ns Fall Time tf 22 40 Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 A/ms 50 80 Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 8 16 24 32 40 0.0 0.8 1.6 2.4 3.2 4.0 0 8 16 24 32 40 0 123 456 Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS = 10 thru 6 V 5 V 4 V VGS - Gate-to-Source Voltage (V) TC = 125_C -55 _C 25 _C |
类似零件编号 - SI4480EY-T1 |
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