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CSD22206W 数据表(PDF) 3 Page - Texas Instruments

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部件名 CSD22206W
功能描述  8-V P-Channel NexFET Power MOSFET
Download  12 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CSD22206W 数据表(HTML) 3 Page - Texas Instruments

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3
CSD22206W
www.ti.com
SLPS689 – MAY 2017
Product Folder Links: CSD22206W
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = –250 μA
–8
V
BVGSS
Gate-to-source voltage
VDS = 0 V, IG = –250 μA
–6
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –6.4 V
–1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –6 V
–100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = –250 μA
–0.4
–0.7
–1.05
V
RDS(on)
Drain-to-source on resistance
VGS = –2.5 V, IDS = –2 A
6.8
9.1
m
VGS = –4.5 V, IDS = –2 A
4.7
5.7
gfs
Transconductance
VDS = –0.8 V, IDS = –2 A
20
S
DYNAMIC CHARACTERISTICS
CISS
Input capacitance
VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz
1750
2275
pF
COSS
Output capacitance
960
1250
pF
CRSS
Reverse transfer capacitance
340
440
pF
RG
Series gate resistance
30
Ω
Qg
Gate charge total (–4.5 V)
VDS = –4 V,
ID = –2 A
11.2
14.6
nC
Qgd
Gate charge gate-to-drain
1.8
nC
Qgs
Gate charge gate-to-source
2.1
nC
Qg(th)
Gate charge at Vth
1.3
nC
QOSS
Output charge
VDS = –4 V, VGS = 0 V
7.2
nC
td(on)
Turnon delay time
VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 0 Ω
37
ns
tr
Rise time
17
ns
td(off)
Turnoff delay time
118
ns
tf
Fall time
45
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
IDS = –2 A, VGS = 0 V
–0.69
–1.0
Qrr
Reverse recovery charge
VDS= –4 V, IF = –1 A,
di/dt = 200 A/μs
24
nC
trr
Reverse recovery time
59
ns
(1)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
TYPICAL VALUES
UNIT
RθJA
Junction-to-ambient thermal resistance(1)
75
°C/W
Junction-to-ambient thermal resistance(2)
230


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