CSD20060 datasheet(2/4 Pages) ETC

部件名	CSD20060

功能描述	ZERO RECOVERY RECTIFIER

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CSD20060

Page 2 • CSD20060, Rev/A

®

P O W E R

ELECTRICAL CHARACTERISTICS (PER LEG)

Parameter

Symbol

Min

Typ

Max

Units

Forward Voltage

IF = 10A TJ=25°C

IF = 10A TJ=175°C

VF

1.6

2.0

1.8

2.4

V

Reverse Current

VR = 600V TJ=25°C

VR = 600V TJ=175°C

IR

50

100

200

1000

µA

Total Capacitive Charge

VR = 600V,IF = 10A, di/dt = 500 A/µs, TJ = 25°C

QC

28

nC

Total Capacitance

VR = 0V, TJ = 25°C, f =1MHz

VR = 200V, TJ = 25°C, f =1MHz

VR = 400V, TJ = 25°C, f =1MHz

C

550

65

50

pF

NOTE:

1.

This is a majority carrier diode, so there is no reverse recovery charge.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Units

Thermal Resistance from Junction to Case

Per Leg

RθJC

1.08

°C/W

Per Device

RθJC

0.54

°C/W

Typical Performance (Per Leg)

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

0

2

4

6

8

10

12

14

16

18

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VF Forward Voltage (V)

T J = 25°C

T J = 75°C

T

J = 125°C

T J = 175°C

0

20

40

60

80

100

120

140

160

180

200

0

100

200

300

400

500

600

700

VR Reverse Voltage (V)

T

J = 25°C

TJ = 75°C

T

J = 125°C

TJ = 175°C

类似零件编号 - CSD20060

制造商	部件名	数据表	功能描述
Cree, Inc	CSD20060D	444Kb / 6P	Silicon Carbide Schottky Diode

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