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SI4703-B17 数据表(PDF) 4 Page - Silicon Laboratories |
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SI4703-B17 数据表(HTML) 4 Page - Silicon Laboratories |
4 / 42 page Si4703-B17 4 Confidential Rev. 1.0 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Digital Supply Voltage VD 2.7 — 5.5 V Analog Supply Voltage VA 2.7 — 5.5 V Interface Supply Voltage VIO 1.5 — 3.6 V Digital Power Supply Power-Up Rise Time VDRISE 25 — — µs Analog Power Supply Power-Up Rise Time VARISE 25 — — µs Interface Power Supply Power-Up Rise Time VIORISE 25 — — µs Ambient Temperature TA –20 25 85 °C Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at VD = VA = 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless otherwise stated. Table 2. Absolute Maximum Ratings1,2 Parameter Symbol Value Unit Digital Supply Voltage VD –0.5 to 5.8 V Analog Supply Voltage VA –0.5 to 5.8 V Interface Supply Voltage VIO –0.5 to 3.9 V Input Current3 IIN ±10 mA Input Voltage3 VIN –0.3 to (VIO + 0.3) V Operating Temperature TOP –40 to 95 °C Storage Temperature TSTG –55 to 150 °C RF Input Level4 0.4 VpK Notes: 1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended operating conditions for extended periods may affect device reliability. 2. The Si4703 device is a high-performance RF integrated circuit with an ESD rating of < 2 kV HBM. Handling and assembly of this device should only be done at ESD-protected workstations. 3. For input pins SCLK, SEN, SDIO, RST, RCLK, GPIO1, GPIO2, and GPIO3. 4. At RF input pins. |
类似零件编号 - SI4703-B17 |
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类似说明 - SI4703-B17 |
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