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ADF4210 数据表(PDF) 4 Page - Analog Devices

部件名 ADF4210
功能描述  Dual RF/IF PLL Frequency Synthesizers
Download  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADF4210 数据表(HTML) 4 Page - Analog Devices

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REV. A
ADF4210/ADF4211/ADF4212/ADF4213
–4–
DB0 (LSB)
(CONTROL BIT C1)
CLOCK
DATA
LE
LE
DB20
(MSB)
DB19
DB2
DB1
(CONTROL BIT C2)
t6
t5
t1
t2
t3
t4
Figure 1. Timing Diagram
TIMING CHARACTERISTICS
Limit at
TMIN to TMAX
Parameter
(B Version)
Unit
Test Conditions/Comments
t1
10
ns min
DATA to CLOCK Set-Up Time
t2
10
ns min
DATA to CLOCK Hold Time
t3
25
ns min
CLOCK High Duration
t4
25
ns min
CLOCK Low Duration
t5
10
ns min
CLOCK to LE Set-Up Time
t6
20
ns min
LE Pulsewidth
NOTES
Guaranteed by design but not production tested.
Specifications subject to change without notice.
(VDD1 = VDD2 = 3 V
10%, 5 V
10%; VDD1, VDD2
≤ VP1, VP2 ≤ 6 V
10%; AGNDRF = DGNDRF
= AGNDIF = DGNDIF = 0 V; TA = TMIN to TMAX unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
1, 2
(TA = 25
°C unless otherwise noted)
VDD1 to GND
3
. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB,
IFINA, IFINB to GND . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150
°C
TSSOP
θ
JA Thermal Impedance
. . . . . . . . . . . . . 150.4
°C/W
CSP
θJA (Paddle Soldered) . . . . . . . . . . . . . . . . . . . 122°C/W
CSP
θJA (Paddle Not Soldered) . . . . . . . . . . . . . . . . 216°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2This device is a high-performance RF integrated circuit with an ESD rating of
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
3GND = AGND = DGND = 0 V.
TRANSISTOR COUNT
11749 (CMOS) and 522 (Bipolar).
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
*
ADF4210BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
ADF4210BCP
–40
°C to +85°C
Chip Scale Package
CP-20
ADF4211BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
ADF4211BCP
–40
°C to +85°C
Chip Scale Package
CP-20
ADF4212BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
ADF4212BCP
–40
°C to +85°C
Chip Scale Package
CP-20
ADF4213BRU
–40
°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
RU-20
ADF4213BCP
–40
°C to +85°C
Chip Scale Package
CP-20
*Contact the factory for chip availability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADF4210/ADF4211/ADF4212/ADF4213 features proprietary ESD protection circuitry, per-
manent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,
proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE


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