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STD200GK14 数据表(PDF) 2 Page - Sirectifier Semiconductors |
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STD200GK14 数据表(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page Thyristor-Diode Modules Symbol Test Conditions Characteristic Values Unit IRRM TVJ=TVJM; VR=VRRM; VD=VDRM 70 mA FEATURES * International standard package * DCB base plate * Glass passivated chips * Isolation voltage 3600 V~ ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches mA IDRM 40 V VT, VF IT, IF=600A; TVJ=25oC 1.50 VTO For power-loss calculations only (TVJ=140oC) 0.95 V rT 1.0 m VD=6V; TVJ=25oC TVJ=-40oC VGT 2 3 V VD=6V; TVJ=25oC TVJ=-40oC IGT 150 200 mA VGD TVJ=TVJM; VD=2/3VDRM 0.25 V IGD 10 mA IH TVJ=25oC; VD=6V; RGK= 150 mA TVJ=25oC; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us 300 mA IL per thyristor/diode; DC current per module RthJC 0.140 0.070 K/W per thyristor/diode; DC current per module RthJK 0.180 0.090 K/W dS Creeping distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 TVJ=25oC; VD=1/2VDRM IG=1A; diG/dt=1A/us tgd 2 us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ. VR=100V; dv/dt=50V/us; VD=2/3VDRM tq 200 us uC QS TVJ=125oC; IT, IF=400A; -di/dt=50A/us 760 IRM 275 A STD200GKXX * UL File NO.E310749 * RoHS compliant P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
类似零件编号 - STD200GK14 |
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类似说明 - STD200GK14 |
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