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STP6NM60N 数据表(PDF) 5 Page - STMicroelectronics |
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STP6NM60N 数据表(HTML) 5 Page - STMicroelectronics |
5 / 19 page STx6NM60N Electrical characteristics 5/19 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD= 300 V, ID = 2.3 A, RG= 4.7 Ω, VGS = 10 V Figure 18 10 8 40 9 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 4.6 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 18.4 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD= 4.6 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6 A, di/dt = 100 A/µs, VDD=20 V, Figure 20 300 2 12 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 4.6 A, di/dt = 100 A/µs, VDD= 20 V, Tj= 150 °C Figure 20 470 3 12 ns µC A Obsolete Product(s) - Obsolete Product(s) |
类似零件编号 - STP6NM60N |
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类似说明 - STP6NM60N |
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