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TPA3113D2 数据表(PDF) 5 Page - Texas Instruments |
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TPA3113D2 数据表(HTML) 5 Page - Texas Instruments |
5 / 36 page 5 TPA3113D2 www.ti.com SLOS650F – AUGUST 2009 – REVISED JUNE 2016 Product Folder Links: TPA3113D2 Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated Pin Functions (continued) PIN TYPE(1) DESCRIPTION NO. NAME 19 PGND — Power ground for the H-bridges. 20 OUTNR O Class-D H-bridge negative output for right channel. 21 BSNR I Bootstrap I/O for right channel, negative high-side FET. 22 BSNL I Bootstrap I/O for left channel, negative high-side FET. 23 OUTNL O Class-D H-bridge negative output for left channel. 24 PGND — Power ground for the H-bridges. 25 OUTPL O Class-D H-bridge positive output for left channel. 26 BSPL I Bootstrap I/O for left channel, positive high-side FET. 27 PVCCL P Power supply for left channel H-bridge. Right channel and left channel power supply inputs are connect internally. 28 PVCCL P Power supply for left channel H-bridge. Right channel and left channel power supply inputs are connect internally. 29 PowerPAD — Connect to ground (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The voltage slew rate of these pins must be restricted to no more than 10 V/ms. For higher slew rates, use a 100-kΩ resister in series with the pins. (3) The TPA3113D2 incorporates an exposed thermal pad on the underside of the chip. This acts as a heatsink, and it must be connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in the device going into thermal protection shutdown. See TI Technical Briefs Quad Flatpack No-Lead Logic Packages for more information about using the TSSOP thermal pad. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Supply voltage AVCC, PVCC –0.3 30 V VI Interface pin voltage SD, GAIN0, GAIN1, PBTL, FAULT (2) –0.3 VCC + 0.3 V < 10 V/ms PLIMIT –0.3 GVDD + 0.3 V RINN, RINP, LINN, LINP –0.3 6.3 V Continuous total power dissipation See Thermal Information TA Operating free-air temperature –40 85 °C TJ Operating junction temperature(3) –40 150 °C RL Minimum load resistance BTL: PVCC > 15 V 4.8 Ω BTL: PVCC ≤ 15 V 3.2 PBTL 3.2 Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) In accordance with JEDEC Standard 22, Test Method A114-B. (3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (4) In accordance with JEDEC Standard 22, Test Method C101-A 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(3)(4) ±500 |
类似零件编号 - TPA3113D2_17 |
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类似说明 - TPA3113D2_17 |
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