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STP110N8F6 数据表(PDF) 3 Page - STMicroelectronics |
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STP110N8F6 数据表(HTML) 3 Page - STMicroelectronics |
3 / 13 page DocID026831 Rev 2 3/13 STP110N8F6 Electrical ratings 13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 110 A ID Drain current (continuous) at TC = 100 °C 85 A IDM (1) 1. Pulse width is limited by safe operating area Drain current (pulsed) 440 A PTOT Total dissipation at TC = 25 °C 200 W EAS (2) 2. Starting TJ = 25 °C, ID = 55 A, VDD = 60 V Single pulse avalanche energy 180 mJ TJ Operating junction temperature -55 to 175 °C Tstg Storage temperature °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.75 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W |
类似零件编号 - STP110N8F6 |
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类似说明 - STP110N8F6 |
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