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STU13N65M2 数据表(PDF) 1 Page - STMicroelectronics |
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STU13N65M2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is information on a product in full production. December 2014 DocID026894 Rev 1 1/16 STP13N65M2, STU13N65M2 N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. TO-220 3 2 1 TAB IPAK 1 2 3 TAB AM15572v1 , TAB Order code VDS RDS(on) max ID STP13N65M2 650 V 0.43 Ω 10A STU13N65M2 Table 1. Device summary Order code Marking Package Packaging STP13N65M2 13N65M2 TO-220 Tube STU13N65M2 IPAK www.st.com |
类似零件编号 - STU13N65M2 |
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类似说明 - STU13N65M2 |
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