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STU13N60M2 数据表(PDF) 5 Page - STMicroelectronics |
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STU13N60M2 数据表(HTML) 5 Page - STMicroelectronics |
5 / 18 page DocID023937 Rev 5 5/18 STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 11 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 44 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 11 A, V GS = 0 - 1.6 V t rr Reverse recovery time I SD = 11 A, di/dt = 100 A/μs V DD = 60 V (see Figure 18) -297 ns Q rr Reverse recovery charge - 2.8 μC I RRM Reverse recovery current - 18.5 A t rr Reverse recovery time I SD = 11 A, di/dt = 100 A/μs V DD = 60 V, T j =150 °C (see Figure 18) -394 ns Q rr Reverse recovery charge - 3.8 μC I RRM Reverse recovery current - 19 A |
类似零件编号 - STU13N60M2 |
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类似说明 - STU13N60M2 |
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