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L6235Q 数据表(PDF) 9 Page - STMicroelectronics

部件名 L6235Q
功能描述  Tacho output for speed loop
Download  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6235Q 数据表(HTML) 9 Page - STMicroelectronics

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L6235Q
Circuit description
Doc ID 018997 Rev 2
9/33
4
Circuit description
4.1
Power stages and charge pump
The L6235Q integrates a 3-phase bridge, which consists of 6 power MOSFETs connected
as shown in Figure 1, each power MOSFET has an RDS(ON) = 0.3 Ω (typical value @ 25 °C)
with intrinsic fast freewheeling diode. Switching patterns are generated by the PWM current
controller and the Hall effect sensor decoding logic (Chapter 4.3 on page 11). Cross
conduction protection is implemented by using a dead time (tDT = 1 µs typical value) set by
internal timing circuit between the turn-off and turn-on of two power MOSFETs in one leg of
a bridge.
Pins VSA and VSB must be connected together to the supply voltage (VS).
Using an N-channel power MOSFET for the upper transistors in the bridge requires a gate
drive voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained
through an internal oscillator and a few external components to realize a charge pump
circuit, as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 kHz
(typically) with 10 V amplitude. Recommended values/part numbers for the charge pump
circuit are shown in Table 5.
Figure 5.
Charge pump circuit
Table 5.
Charge pump external component values
Component
Value
CBOOT
220 nF
CP
10 nF
RP
100
Ω
D1
1N4148
D2
1N4148
AM02559v1
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB


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