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STGW40H120F2 数据表(PDF) 4 Page - STMicroelectronics |
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STGW40H120F2 数据表(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGW40H120F2, STGWA40H120F2 4/17 DocID025853 Rev 3 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 1200 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 40 A 2.1 2.6 V VGE = 15 V, IC = 40 A TJ = 125 °C 2.4 VGE = 15 V, IC = 40 A TJ = 175 °C 2.5 VGE(th) Gate threshold voltage VCE = VGE, IC = 2 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 1200 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -3200 - pF Coes Output capacitance - 220 - pF Cres Reverse transfer capacitance -80 - pF Qg Total gate charge VCC = 960 V, IC = 40 A, VGE = 15 V, see Figure 24 -158 - nC Qge Gate-emitter charge - 17 - nC Qgc Gate-collector charge - 85 - nC |
类似零件编号 - STGW40H120F2 |
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类似说明 - STGW40H120F2 |
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