STGW40H120F2 datasheet(4/17 Pages) STMICROELECTRONICS

部件名	STGW40H120F2

功能描述	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 17 page

Electrical characteristics

STGW40H120F2, STGWA40H120F2

4/17

DocID025853 Rev 3

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

1200

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

2.1

2.6

V

VGE = 15 V, IC = 40 A

TJ = 125 °C

2.4

VGE = 15 V, IC = 40 A

TJ = 175 °C

2.5

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 2 mA

5

6

7

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 1200 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-3200

-

pF

Coes

Output capacitance

-

220

-

pF

Cres

Reverse transfer

capacitance

-80

-

pF

Qg

Total gate charge

VCC = 960 V, IC = 40 A,

VGE = 15 V, see Figure 24

-158

-

nC

Qge

Gate-emitter charge

-

17

-

nC

Qgc

Gate-collector charge

-

85

-

nC

类似零件编号 - STGW40H120F2

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW40H120DF2	821Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed June 2016 Rev 5
Inchange Semiconductor ...	STGW40H120DF2	358Kb / 3P	Trench gate Field-Stop IGBT 2023-10-16

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