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STGP20V60F 数据表(PDF) 1 Page - STMicroelectronics |
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STGP20V60F 数据表(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. July 2013 DocID024890 Rev 1 1/18 18 STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: T J = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: V CE(sat) = 1.8 V (typ.) @ I C = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Lead free package Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2, TAB) E (3) G (1) D2PAK 1 3 TAB 1 2 3 TAB TO-220 Table 1. Device summary Order code Marking Package Packaging STGB20V60F GB20V60F D 2 PAK Tape and reel STGP20V60F GP20V60F TO-220 Tube www.st.com |
类似零件编号 - STGP20V60F |
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类似说明 - STGP20V60F |
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