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STGP20V60F 数据表(PDF) 1 Page - STMicroelectronics

部件名 STGP20V60F
功能描述  600 V, 20 A very high speed trench gate field-stop IGBT
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP20V60F 数据表(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
July 2013
DocID024890 Rev 1
1/18
18
STGB20V60F,
STGP20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T
J
= 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
D2PAK
1
3
TAB
1
2
3
TAB
TO-220
Table 1. Device summary
Order code
Marking
Package
Packaging
STGB20V60F
GB20V60F
D
2
PAK
Tape and reel
STGP20V60F
GP20V60F
TO-220
Tube
www.st.com


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