STGB20N40LZ datasheet(4/20 Pages) STMICROELECTRONICS

部件名	STGB20N40LZ

功能描述	Low saturation voltage

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制造商	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB20N40LZ, STGD20N40LZ

4/20

DocID024251 Rev 5

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

VCES(clamped)

Collector emitter

clamped voltage

(VGE = 0)

IC = 2 mA

390

V

IC = 2 mA, TJ = - 40 °C to 175 °C

365

425

V

VECS

Emitter collector

break-down voltage

(VGE = 0)

IC = 75 mA

28

V

IC = 75 mA

TJ = - 40 °C to 175 °C

20

V

VGE(clamped)

Gate emitter

clamped voltage

IG = ±2 mA

TJ = - 40 °C to 175 °C

12

16

V

ICES

Collector cut-off

current

(VGE = 0)

VCE = 15 V, TJ = 175 °C

20

µA

VCE = 200 V, TJ = 175 °C

100

µA

IGES

Gate-emitter

leakage current

(VCE = 0)

VGE = ±10 V

625

µA

VGE = ±10 V

TJ = - 40 °C to 175 °C

450

900

µA

RGE

Gate emitter

resistance

11

16

22

k

Ω

RG

Gate resistance

100

Ω

VGE(th)

Gate threshold

voltage

VGE =VCE, IC = 1 mA

1.5

1.95

2.5

V

VGE =VCE, IC = 1 mA, TJ = 175 °C 0.85

1.3

1.7

V

VCE(sat)

Collector emitter

saturation voltage

VGE = 4.5 V, IC = 10 A,

TJ = 175 °C

1.5

1.8

V

VGE = 4 V, IC = 6 A,

1.30

1.6

V

gfe

Forward

transconductance

VCE = 25 V, IC = 10 A

10.3

S

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-910

-

pF

Coes

Output capacitance

-

70

-

pF

Cres

Reverse transfer

capacitance

-10

-

pF

Qg

Gate charge

VCE = 280 V, IC = 10 A,

VGE = 5 V

-24

-

nC

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